![]() But in N-channel FET P region is heavily doped than N-type thus depletion region extends more in N region than P region.If both P and N regions are heavily doped then the depletion region extends symmetrically on both sides.When a PN junction is reverse biased the electrons and holes diffuse across junction by leaving immobile ions on the N and P sides, the region containing these immobile ions is known as depletion region.The reverse bias is applied by a battery voltage Vgs connected between the gate and the source terminal i.e positive terminal of the battery is connected to the source and negative terminal to gate. By Varying the value of V ds holding V gs constant.There are two ways to control the channel width When the negative gate bias voltage is further increased, the depletion regions meet at the center and Id is cut off completely.Its resistance is increased, and I d is reduced. The result is that the channel is narrowed. ![]() of charge carriers so it behaves as an insulator.
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